Approaching barrier-free contacts to monolayer MoS2 employing [Co/Pt] multilayer electrodes
The broken inversion symmetry and time-reversal symmetry along with the large spin–orbit
interactions in monolayer MoS2 make it an ideal candidate for novel valleytronic
applications. However, the realization of efficient spin-valley-controlled devices demands
the integration of perpendicular magnetic anisotropy (PMA) electrodes with negligible
Schottky barriers. Here, as the first demonstration, we fabricated a monolayer MoS2 field-
effect transistor with PMA electrodes: Pt/[Co/Pt] 3 and [Co/Pt] 2. The I–V curves of PMA/MoS2 …
interactions in monolayer MoS2 make it an ideal candidate for novel valleytronic
applications. However, the realization of efficient spin-valley-controlled devices demands
the integration of perpendicular magnetic anisotropy (PMA) electrodes with negligible
Schottky barriers. Here, as the first demonstration, we fabricated a monolayer MoS2 field-
effect transistor with PMA electrodes: Pt/[Co/Pt] 3 and [Co/Pt] 2. The I–V curves of PMA/MoS2 …
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