Heteroepitaxy of semiconductors on two-dimensional (2-d) atomic layered materials enables
the use of flexible and transferable inorganic electronic and optoelectronic devices in
various applications. Herein, we report the shape-and morphology-controlled van der Waals
(vdW) epitaxy of ZnO nanostructures on hexagonal boron nitride (hBN) insulating layers for
an architectured semiconductor integration on the 2-d layered materials. The vdW surface
feature of the 2-d nanomaterials, because of the surface free of dangling bonds, typically …

Heteroepitaxy of semiconductors on two-dimensional (2-d) atomic layered materials enables
the use of flexible and transferable inorganic electronic and optoelectronic devices in
various applications. Herein, we report the shape-and morphology-controlled van der Waals
(vdW) epitaxy of ZnO nanostructures on hexagonal boron nitride (hBN) insulating layers for
an architectured semiconductor integration on the 2-d layered materials. The vdW surface
feature of the 2-d nanomaterials, because of the surface free of dangling bonds, typically …