Atomic layer deposition and selective etching of ruthenium for area-selective deposition: Temperature dependence and supercycle design
For future sub-5 nm technology nodes, the fabrication of semiconductor devices will likely
involve the use of area-selective atomic layer deposition (ALD). While area-selective ALD
processes have been reported for a variety of materials, most approaches yield a limited
selectivity, for example, due to growth initiation at defects or impurities on the non-growth
area. Recently, we demonstrated that Ru ALD can be combined with selective etching to
achieve area-selective ALD of metal-on-metal with high selectivity. Cycles consisting of an O …
involve the use of area-selective atomic layer deposition (ALD). While area-selective ALD
processes have been reported for a variety of materials, most approaches yield a limited
selectivity, for example, due to growth initiation at defects or impurities on the non-growth
area. Recently, we demonstrated that Ru ALD can be combined with selective etching to
achieve area-selective ALD of metal-on-metal with high selectivity. Cycles consisting of an O …
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