Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma
HX Zhang, CM Zhang, PF Wang - 2015 China Semiconductor …, 2015 - ieeexplore.ieee.org
HX Zhang, CM Zhang, PF Wang
2015 China Semiconductor Technology International Conference, 2015•ieeexplore.ieee.orgRuthenium dioxide (RuO 2) thin films can be used as the electrode material for future
technology nodes. In this work, atomic layer deposition (ALD) was used to deposit thin films
of RuO 2 on SiO 2 using bis-(ethylcyclopentadienyl)-ruthenium [Ru (EtCp) 2] as the
precursor and oxygen (O 2) plasma as the reducing agent. The thermal stability of the
deposited films were investigated in the N 2 ambient and in the forming-gas environments
using rapid thermal processing (RTP). High-resolution transmission electron microscope …
technology nodes. In this work, atomic layer deposition (ALD) was used to deposit thin films
of RuO 2 on SiO 2 using bis-(ethylcyclopentadienyl)-ruthenium [Ru (EtCp) 2] as the
precursor and oxygen (O 2) plasma as the reducing agent. The thermal stability of the
deposited films were investigated in the N 2 ambient and in the forming-gas environments
using rapid thermal processing (RTP). High-resolution transmission electron microscope …
Ruthenium dioxide (RuO 2 ) thin films can be used as the electrode material for future technology nodes. In this work, atomic layer deposition (ALD) was used to deposit thin films of RuO 2 on SiO 2 using bis-(ethylcyclopentadienyl)-ruthenium [Ru(EtCp) 2 ] as the precursor and oxygen (O 2 ) plasma as the reducing agent. The thermal stability of the deposited films were investigated in the N 2 ambient and in the forming-gas environments using rapid thermal processing (RTP). High-resolution transmission electron microscope (HR-TEM) and atomic force microscopy (AFM) were also employed to explore the growth mechanism of the RuO 2 thin films on SiO 2 .
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