Atomic layer deposition of ZnS via in situ production of H2S
Atomic layer deposition (ALD) of ZnS films utilizing diethylzinc and in situ generated H2S
was performed over a temperature range of 60° C–400° C. This method for generating H2S
in situ was developed to eliminate the need to store high pressure H2S gas. The H2S
precursor was generated by heating thioacetamide to 150° C in an inert atmosphere,
producing acetonitrile and H2S as confirmed with mass spectroscopy. ALD behavior was
confirmed by investigation of growth behavior and saturation curves. The properties of the …
was performed over a temperature range of 60° C–400° C. This method for generating H2S
in situ was developed to eliminate the need to store high pressure H2S gas. The H2S
precursor was generated by heating thioacetamide to 150° C in an inert atmosphere,
producing acetonitrile and H2S as confirmed with mass spectroscopy. ALD behavior was
confirmed by investigation of growth behavior and saturation curves. The properties of the …
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