Behaviour of power MOSFETs at cryogenic temperatures
R Karunanithi, AK Raychaudhuri, Z Szücs… - Cryogenics, 1991 - Elsevier
In this paper an investigation is reported on Siemens-power-metal-oxide-semiconductor
(SIPMOS) transistors of both p and n channel types, for their suitability for cryogenic
applications. The drain characteristics, temperature dependence of R ds (on) and switching
behaviour have been studied in the temperature range 4.2–300 K in BSS91 and BSS92
MOSFETs. The experiments reveal that these types of power transistors are well suited for
operations down to≈ 30 K. However, below 30 K the operating characteristics make them …
(SIPMOS) transistors of both p and n channel types, for their suitability for cryogenic
applications. The drain characteristics, temperature dependence of R ds (on) and switching
behaviour have been studied in the temperature range 4.2–300 K in BSS91 and BSS92
MOSFETs. The experiments reveal that these types of power transistors are well suited for
operations down to≈ 30 K. However, below 30 K the operating characteristics make them …
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