The structure and composition of single GaAsBi/GaAs epilayers grown by molecular beam
epitaxy were investigated by optical and transmission electron microscopy techniques.
Firstly, the GaAsBi layers exhibit two distinct regions and a varying Bi composition profile in
the growth direction. In the lower (25 nm) region, the Bi content decays exponentially from
an initial maximum value, while the upper region comprises an almost constant Bi content
until the end of the layer. Secondly, despite the relatively low Bi content, CuPt B-type …

The structure and composition of single GaAsBi/GaAs epilayers grown by molecular beam
epitaxy were investigated by optical and transmission electron microscopy techniques.
Firstly, the GaAsBi layers exhibit two distinct regions and a varying Bi composition profile in
the growth direction. In the lower (25 nm) region, the Bi content decays exponentially from
an initial maximum value, while the upper region comprises an almost constant Bi content
until the end of the layer. Secondly, despite the relatively low Bi content, CuPtB-type …