Blue laser diodes including lattice-matched Al0. 83In0. 17N bottom cladding layer
Electronics Letters, 2008•IET
A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal
organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0. 83In0. 17N
cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guided
devices at room temperature under pulsed current injection conditions. Direct comparison
with structures including only a standard Al0. 07Ga0. 93N bottom cladding shows an
improved optical confinement. This is exemplified by a decreased threshold current density.
organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0. 83In0. 17N
cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guided
devices at room temperature under pulsed current injection conditions. Direct comparison
with structures including only a standard Al0. 07Ga0. 93N bottom cladding shows an
improved optical confinement. This is exemplified by a decreased threshold current density.
A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guided devices at room temperature under pulsed current injection conditions. Direct comparison with structures including only a standard Al0.07Ga0.93N bottom cladding shows an improved optical confinement. This is exemplified by a decreased threshold current density.
IET
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