Broadband GaN switch mode class E power amplifier for UHF applications
A Al Tanany, A Sayed, G Boeck - 2009 IEEE MTT-S …, 2009 - ieeexplore.ieee.org
A Al Tanany, A Sayed, G Boeck
2009 IEEE MTT-S International Microwave Symposium Digest, 2009•ieeexplore.ieee.orgIn this work a broad-band class E power amplifier (PA) is designed, manufactured and
measured. 400 MHz bandwidth with a center frequency of 800 MHz was realized using a
GaN HEMT device. A novel and easy circuit topology is proposed for broad-band bandpass
filter with integrated output matching network. Different filter types are discussed, suitable
topology is chosen and design equations are shown. A maximum drain efficiency of
87.8%(PAE= 80.6%) is observed. Maximum output power of 49 W is measured with 16.3 dB …
measured. 400 MHz bandwidth with a center frequency of 800 MHz was realized using a
GaN HEMT device. A novel and easy circuit topology is proposed for broad-band bandpass
filter with integrated output matching network. Different filter types are discussed, suitable
topology is chosen and design equations are shown. A maximum drain efficiency of
87.8%(PAE= 80.6%) is observed. Maximum output power of 49 W is measured with 16.3 dB …
In this work a broad-band class E power amplifier (PA) is designed, manufactured and measured. 400 MHz bandwidth with a center frequency of 800 MHz was realized using a GaN HEMT device. A novel and easy circuit topology is proposed for broad-band bandpass filter with integrated output matching network. Different filter types are discussed, suitable topology is chosen and design equations are shown. A maximum drain efficiency of 87.8 % (PAE = 80.6 %) is observed. Maximum output power of 49 W is measured with 16.3 dB power gain at the 1 dB compression point.
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