… the growth characteristic and crystal quality of GaInNAs grown by CBE using radical nitrogen
and by MOCVD … DMHy and discuss on the growth and degradation mechanism of GaInNAs. …

… the growth of GaInNAs by chemical beam epitaxy (CBE) using … improvement of GaInNAs
quality by CBE and demonstrated … by CBE, however, cladding layers were grown by MOCVD. …

… van een MOCVD-proces op lage temperatuur voor GaInNAs … MOCVD is de geprefereerde
techniek in de industrie en het onderzoek… zoals de ultrahoogvacuumtechnieken MBE en CBE. …

… grown by MBE or MOCVD, our CBE-grown GaAsN showed a … growth surface, as a result,
the relaxation of N clusters was expected. In this paper, all GaAsN samples were grown by CBE …

… CBE uses vacuum conditions in between MBE and MOCVD; elements are delivered to the
wafer in the form of gas precursors. The vacuum level is high enough to ensure the mean free …

… the growth of GaInNAs QW structures [18]. In this paper, we report on the detail of CBE
growth of GaInNAs QW and investigate optical absorption properties of GaInNAs QWs. …

… High quality GaInNAs materials are also grown by MOCVD and CBE by optimizing the
growth condition. We … 3.3 CBE growth of GaInNAs Lasers We have been also investigated the …

… quality of grown on GaInNAs. One of reasons for this is that the … growth method for the III-V
compound semiconductor with N. In this study, the CBE technique was used for the growth of …

… In the MOCVD- or gas source MBE-grown GaInNAs, there are in general large amounts
of hydrogen and carbon impurities are incorporated through the thermally decomposing the …

… In this study, we grew GaInNAs QDs by CBE for the first time, and … by CBE, while a
bottom n-AlGaAs cladding layer was grown by metal organic chemical vapor deposition (MOCVD). …