Calibrated nanoscale dopant profiling using a scanning microwave microscope
HP Huber, I Humer, M Hochleitner, M Fenner… - Journal of Applied …, 2012 - pubs.aip.org
The scanning microwave microscope is used for calibrated capacitance spectroscopy and
spatially resolved dopant profiling measurements. It consists of an atomic force microscope
combined with a vector network analyzer operating between 1–20 GHz. On silicon
semiconductor calibration samples with doping concentrations ranging from 10 15 to 10 20
atoms/cm 3, calibrated capacitance-voltage curves as well as derivative dC/dV curves were
acquired. The change of the capacitance and the dC/dV signal is directly related to the …
spatially resolved dopant profiling measurements. It consists of an atomic force microscope
combined with a vector network analyzer operating between 1–20 GHz. On silicon
semiconductor calibration samples with doping concentrations ranging from 10 15 to 10 20
atoms/cm 3, calibrated capacitance-voltage curves as well as derivative dC/dV curves were
acquired. The change of the capacitance and the dC/dV signal is directly related to the …
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