Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine
SP Watkins, G Haacke - Applied physics letters, 1991 - pubs.aip.org
Undoped p‐type GaAs epilayers were grown by low‐pressure metalorganic chemical vapor
deposition (MOCVD) at 650° C and 76 Torr using either arsine or tertiarybutylarsine (TBA),
and trimethylgallium (TMG). Extremely high‐purity precursors were used in order to
eliminate extrinsic doping effects. Carbon acceptors from the TMG were the dominant
residual electrical impurities under all growth conditions. Temperature‐dependent Hall
measurements were used to make a quantitative comparison of the carbon acceptor …
deposition (MOCVD) at 650° C and 76 Torr using either arsine or tertiarybutylarsine (TBA),
and trimethylgallium (TMG). Extremely high‐purity precursors were used in order to
eliminate extrinsic doping effects. Carbon acceptors from the TMG were the dominant
residual electrical impurities under all growth conditions. Temperature‐dependent Hall
measurements were used to make a quantitative comparison of the carbon acceptor …
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