Characterization of silane based ultra-thin barrier deposited at elevated temperature
In this work, we describe a quick turn-around characterization approach of ultra-thin layers
on low dielectric constant (Low-K) interlevel dielectric using Electrochemical Impedance
Spectroscopy (EIS). It is demonstrated on an organo-silane based ultra-thin Cu barrier layer,
deposited from liquid phase at elevated temperatures, 90° C-150° C, using high flash
temperature solvents: N-methyl-2-pyrrolydone (NMP, T flash-point= 91° C) or Ethylene
glycol (EG, T flash-point= 116° C). Three Silane (Head group) based monomers; with three …
on low dielectric constant (Low-K) interlevel dielectric using Electrochemical Impedance
Spectroscopy (EIS). It is demonstrated on an organo-silane based ultra-thin Cu barrier layer,
deposited from liquid phase at elevated temperatures, 90° C-150° C, using high flash
temperature solvents: N-methyl-2-pyrrolydone (NMP, T flash-point= 91° C) or Ethylene
glycol (EG, T flash-point= 116° C). Three Silane (Head group) based monomers; with three …
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