Charge offset stability in tunable-barrier Si single-electron tunneling devices
The problem of charge offset drift in single-electron tunneling (SET) devices can preclude
their useful application in metrology and integrated devices. We demonstrate that in tunable-
barrier Si-based SET transistors there is excellent stability, with a drift that is in general less
than 0.01 e; these devices exhibit some unwanted sensitivity to external perturbations
including temperature excursions. Finally, we show that these devices can be “trained” to
minimize their sensitivity to abrupt voltage changes.
their useful application in metrology and integrated devices. We demonstrate that in tunable-
barrier Si-based SET transistors there is excellent stability, with a drift that is in general less
than 0.01 e; these devices exhibit some unwanted sensitivity to external perturbations
including temperature excursions. Finally, we show that these devices can be “trained” to
minimize their sensitivity to abrupt voltage changes.
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