by synchrotron radiation photoelectron spectroscopy. A scanning tunnelling microscopy
study has been performed on the sulfur treated GaAs (111) B surface. Clean GaAs (111)
surfaces, prepared in UHV by the thermal removal of an As cap, were exposed in situ to a
molecular beam of sulfur. Changes in the surface chemistry and the Fermi level position
were monitored as a function of annealing temperature. While this treatment results in …