Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property

T Miyamoto, K Takeuchi, T Kageyama, F Koyama… - Journal of crystal …, 1999 - Elsevier
We examined quantum wells (QW) consisting of GaInNAs/GaAs grown by chemical beam
epitaxy (CBE) using a radical nitrogen source, and the optical property of grown QWs was
investigated by measuring of optical absorption spectra. It was found that the nitrogen
composition was controlled linearly by the nitrogen flow and was increased by decreasing
the growth rate. The nitrogen composition of GaInNAs was almost similar to GaNAs. The
crystal quality was good for samples with the nitrogen composition of less than 0.02 and an …
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