Chemical bonding analysis of a-SiC: H films by Raman spectroscopy

A Chehaidar, R Carles, A Zwick, C Meunier… - Journal of Non …, 1994 - Elsevier
A Chehaidar, R Carles, A Zwick, C Meunier, B Cros, J Durand
Journal of Non-Crystalline Solids, 1994Elsevier
The local structure of hydrogenated amorphous silicon-carbon films is investigated by
Raman spectroscopy. The data are analyzed over a wide frequency range including Stokes
and anti-Stokes scattering, for different alloy compositions. Their interpretation is based on a
lineshape analysis of the spectra by using the density of vibrational states of the different
crystalline materials, and taking into account multiple-order processes. The tendency to
chemical ordering into a sp 3 connected network prevails in Si-rich films. The higher the …
Abstract
The local structure of hydrogenated amorphous silicon-carbon films is investigated by Raman spectroscopy. The data are analyzed over a wide frequency range including Stokes and anti-Stokes scattering, for different alloy compositions. Their interpretation is based on a lineshape analysis of the spectra by using the density of vibrational states of the different crystalline materials, and taking into account multiple-order processes. The tendency to chemical ordering into a sp3 connected network prevails in Si-rich films. The higher the carbon amount, the less ordered are the films, due to the presence of a mixed sp2-sp3 polymeric phase. The results are compared with those deduced from various other techniques and theoretical predictions.
Elsevier
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