Chemical interaction at the buried silicon/zinc oxide thin-film solar cell interface as revealed by hard x-ray photoelectron spectroscopy
Hard X-ray photoelectron spectroscopy (HAXPES) is used to identify chemical interactions
(such as elemental redistribution) at the buried silicon/aluminum-doped zinc oxide thin-film
solar cell interface. Expanding our study of the interfacial oxidation of silicon upon its solid-
phase crystallization (SPC), in which we found zinc oxide to be the source of oxygen, in this
investigation we address chemical interaction processes involving zinc and aluminum. In
particular, we observe an increase of zinc-and aluminum-related HAXPES signals after SPC …
(such as elemental redistribution) at the buried silicon/aluminum-doped zinc oxide thin-film
solar cell interface. Expanding our study of the interfacial oxidation of silicon upon its solid-
phase crystallization (SPC), in which we found zinc oxide to be the source of oxygen, in this
investigation we address chemical interaction processes involving zinc and aluminum. In
particular, we observe an increase of zinc-and aluminum-related HAXPES signals after SPC …
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