Cu/dielectric hybrid bonding at low temperatures of no more than 200 C remains challenging because of the different features of Cu-Cu and dielectric-dielectric (such as SiO 2-SiO 2) bonding. This paper reports a combined surface activated bonding (SAB) technique for low-temperature Cu-Cu, SiO 2-SiO 2, and SiO 2-SiN x bonding. This technique involves a combination of surface irradiation using a Si-containing Ar beam and prebonding attach-detach process prior to bonding in vacuum. Wafer bonding experiments were conducted at either room temperature or 200 C. Results of bonding strength measurements, transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS) observations, and X-ray photoelectron spectroscopy (XPS) analysis were reported and discussed to understand the present combined SAB technique.