Comparative Raman studies of cubic and hexagonal GaN epitaxial layers
A Tabata, R Enderlein, JR Leite, SW Da Silva… - Journal of applied …, 1996 - pubs.aip.org
Hexagonal and cubic GaN layers are grown on (001) GaAs substrates by means of
molecular beam epitaxy. First order Raman spectra are taken from these layers at various
incident laser wavelengths and temperatures. The T 2 transverse‐optical (TO) and
longitudinal‐optical (LO) frequencies of cubic GaN are determined, as well as the A 1 TO
and LO, E 1 TO, and E 2 frequencies of hexagonal GaN. The T 2 TO frequency of cubic GaN
lies between the A 1 and E 1 TO frequencies of hexagonal GaN as one expects comparing …
molecular beam epitaxy. First order Raman spectra are taken from these layers at various
incident laser wavelengths and temperatures. The T 2 transverse‐optical (TO) and
longitudinal‐optical (LO) frequencies of cubic GaN are determined, as well as the A 1 TO
and LO, E 1 TO, and E 2 frequencies of hexagonal GaN. The T 2 TO frequency of cubic GaN
lies between the A 1 and E 1 TO frequencies of hexagonal GaN as one expects comparing …