Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering
Homoepitaxial ZnO growth is demonstrated from conventional RF-sputtering at 400 C on
both Zn and O polar faces of hydrothermally grown ZnO substrates. A minimum yield for the
Rutherford backscattering and channeling spectrum, χ min, equal to∼ 3% and∼ 12% and a
full width at half maximum of the 00.2 diffraction peak rocking curve of (70±10) arc sec and
(1400±100) arc sec have been found for samples grown on the Zn and O face, respectively.
The structural characteristics of the film deposited on the Zn face are comparable with those …
both Zn and O polar faces of hydrothermally grown ZnO substrates. A minimum yield for the
Rutherford backscattering and channeling spectrum, χ min, equal to∼ 3% and∼ 12% and a
full width at half maximum of the 00.2 diffraction peak rocking curve of (70±10) arc sec and
(1400±100) arc sec have been found for samples grown on the Zn and O face, respectively.
The structural characteristics of the film deposited on the Zn face are comparable with those …
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