Compositional inhomogeneity of a high-efficiency InxGa1− xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe

MJ Galtrey, RA Oliver, MJ Kappers, C McAleese… - Applied Physics …, 2008 - pubs.aip.org
An In x Ga 1− x N based multiple quantum well structure emitting in the ultraviolet, which has
the highest reported efficiency (67%) at its wavelength (380 nm)⁠, was analyzed with the
three-dimensional atom probe. The results reveal gross discontinuities and compositional
variations within the quantum well layers on a 20–100 nm length scale. In addition, the
analysis shows the presence of indium in the Al y Ga 1− y N barrier layers, albeit at a very
low level. By comparing with analogous epilayer samples, we suggest that the quantum well …
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