Confinement factor, near and far field patterns in InGaN MQW laser diodes
In this work the influence of the QW number in the active region on spectral characteristics in
InGaN multi quamtun well lasers is analyzed. A comparison between the abrupt index step
structure (Step) and a graded‐index structure (GRIN) is done. The effect of the introduction
of ap‐AlxGa1–xN electron blocking layer, placed above the last InGaN barrier in the Step
structure is also analyzed. Calculations of the confinement factor, near and far field patterns
were carried out. We found that with the adequate aluminum content in this layer, the …
InGaN multi quamtun well lasers is analyzed. A comparison between the abrupt index step
structure (Step) and a graded‐index structure (GRIN) is done. The effect of the introduction
of ap‐AlxGa1–xN electron blocking layer, placed above the last InGaN barrier in the Step
structure is also analyzed. Calculations of the confinement factor, near and far field patterns
were carried out. We found that with the adequate aluminum content in this layer, the …
Abstract
In this work the influence of the QW number in the active region on spectral characteristics in InGaN multi quamtun well lasers is analyzed. A comparison between the abrupt index step structure (Step) and a graded‐index structure (GRIN) is done. The effect of the introduction of a p‐AlxGa1–xN electron blocking layer, placed above the last InGaN barrier in the Step structure is also analyzed. Calculations of the confinement factor, near and far field patterns were carried out. We found that with the adequate aluminum content in this layer, the confinement factor, near and far field patterns are improved, and values similar to those obtained with GRIN structure can be reached. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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