We demonstrate high linearity of fully processed GaN on 2-mm high resistivity (HR) Si
wafers with high effective resistivity (2 cm). Using two common-gate (MOS-) HEMT devices
presenting different levels of distortion as demonstrators, we discuss the impact of substrate-
induced harmonic distortion (HD) on RF switches. By comparing switch and CPW line
measurements, it is possible to estimate the substrate contribution to HD. For the relatively
nonlinear device, the intrinsic device nonlinearities dominate by a 16–20-dB margin over the …

We demonstrate high linearity of fully processed GaN on 2-mm high resistivity (HR) Si
wafers with high effective resistivity (ρeff> 2 k· cm). Using two common-gate (MOS-) HEMT
devices presenting different levels of distortion as demonstrators, we discuss the impact of
substrate-induced harmonic distortion (HD) on RF switches. By comparing switch and CPW
line measurements, it is possible to estimate the substrate contribution to HD. For the
relatively nonlinear device, the intrinsic device nonlinearities dominate by a 16–20-dB …