Control of tensile strain in germanium waveguides through silicon nitride layers
A Ghrib, M De Kersauson, M El Kurdi… - Applied Physics …, 2012 - pubs.aip.org
Germanium ridge waveguides can be tensilely strained using silicon nitride thin films as
stressors. We show that the strain transfer in germanium depends on the width of the
waveguides. Carrier population in the zone center Γ valley can also be significantly
increased when the ridges are oriented along the< 100> direction. We demonstrate an
uniaxial strain transfer up to 1% observed on the room temperature direct band gap
photoluminescence of germanium. The results are supported by 30 band k· p modeling of …
stressors. We show that the strain transfer in germanium depends on the width of the
waveguides. Carrier population in the zone center Γ valley can also be significantly
increased when the ridges are oriented along the< 100> direction. We demonstrate an
uniaxial strain transfer up to 1% observed on the room temperature direct band gap
photoluminescence of germanium. The results are supported by 30 band k· p modeling of …