Creating a Nanoscale Lateral Junction in a Semiconductor Monolayer with a Large Built-in Potential
M Holbrook, Y Chen, H Kim, L Frammolino, M Liu… - ACS …, 2023 - ACS Publications
The ability to engineer atomically thin nanoscale lateral junctions is critical to lay the
foundation for future two-dimensional (2D) device technology. However, the traditional
approach to creating a heterojunction by direct growth of a heterostructure of two different
materials constrains the available band offsets, and it is still unclear if large built-in potentials
are attainable for 2D materials. The electronic properties of atomically thin semiconducting
transition metal dichalcogenides (TMDs) are not static, and their exciton binding energy and …
foundation for future two-dimensional (2D) device technology. However, the traditional
approach to creating a heterojunction by direct growth of a heterostructure of two different
materials constrains the available band offsets, and it is still unclear if large built-in potentials
are attainable for 2D materials. The electronic properties of atomically thin semiconducting
transition metal dichalcogenides (TMDs) are not static, and their exciton binding energy and …
Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential
M Holbrook, Y Chen, H Kim, L Frammolino… - arXiv preprint arXiv …, 2022 - arxiv.org
The ability to engineer atomically thin nanoscale lateral heterojunctions (HJs) is critical to lay
the foundation for future two-dimensional (2D) device technology. However, the traditional
approach to creating a heterojunction by direct growth of a heterostructure of two different
materials constrains the available band offsets, and it is still unclear if large built-in potentials
are attainable for 2D materials. The electronic properties of atomically thin semiconducting
transition metal dichalcogenides (TMDs) are not static, and their exciton binding energy and …
the foundation for future two-dimensional (2D) device technology. However, the traditional
approach to creating a heterojunction by direct growth of a heterostructure of two different
materials constrains the available band offsets, and it is still unclear if large built-in potentials
are attainable for 2D materials. The electronic properties of atomically thin semiconducting
transition metal dichalcogenides (TMDs) are not static, and their exciton binding energy and …
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