As critical dimensions in integrated circuits continue to shrink, the lithography-based alignment of adjacent patterned layers becomes more challenging. Area-selective atomic layer deposition (ALD) allows circumventing the alignment issue by exploiting the chemical contrast of the exposed surfaces. In this work, we investigate the selective deposition of TiO₂ by plasma halogenation of amorphous carbon (a-C:H) acting as a growth-inhibiting layer. On a-C:H, a CF₄ or Cl₂ plasma forms a thin halogenated layer that suppresses the growth of TiO₂, while nucleation remains unaffected on plasma-treated SiO₂. The same halogenating plasmas preferentially etch TiO₂ nuclei over films and thus enable the restoration of the halogenated surface of amorphous carbon. By embedding the intermediate plasma treatments in the ALD TiO₂ sequence, an 8 nm TiO₂ layer could be deposited with a selectivity of 0.998. The application of the cyclic process on a 60 nm half-pitch line pattern resulted in the defect-free deposition of TiO₂ at the bottom of the trenches. Cyclic fluorination demonstrated better growth inhibition compared to chlorination due to more efficient defect removal and retention of the favorable surface composition during plasma exposure. While exploring the TiO₂ nucleation defects at the limit of detection for conventional elemental analysis techniques (<1 × 10¹⁴ at/cm²), we additionally highlight the value of imaging techniques such as atomic force microscopy for understanding defect formation mechanisms and accurately assessing growth selectivity.