GHz), implemented in 0.13 μm SiGe BiCMOS process with f T/f max of 300/500 GHz. The TX
front end consists of a wide-band vector-modulator phase shifter followed by a PA. The TX
yields an output P 1dB of 10 dBm and a total gain of 16 dB. The RX consists of an LNA, wide-
band vector-modulator and a buffer stage. It exhibits a gain of 22 dB and a noise figure of 10
dB. A glass interposer is designed with 8 flip-chip TX/RX front ends and an integrated 8x16 …