Design and application of oxide-based resistive switching devices for novel computing architectures
IEEE Journal of the Electron Devices Society, 2016•ieeexplore.ieee.org
Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and
the applications for the data storage and computing systems have been widely studied. In
this paper, the critical issues correlated with the applications of oxide-based RRAM are
addressed. The physical mechanism and models of oxide-based RRAM are first introduced.
Then the optimization design methodology of devices and operation schemes is discussed.
Finally, a novel architecture for unifying memory/computing system is presented.
the applications for the data storage and computing systems have been widely studied. In
this paper, the critical issues correlated with the applications of oxide-based RRAM are
addressed. The physical mechanism and models of oxide-based RRAM are first introduced.
Then the optimization design methodology of devices and operation schemes is discussed.
Finally, a novel architecture for unifying memory/computing system is presented.
Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied. In this paper, the critical issues correlated with the applications of oxide-based RRAM are addressed. The physical mechanism and models of oxide-based RRAM are first introduced. Then the optimization design methodology of devices and operation schemes is discussed. Finally, a novel architecture for unifying memory/computing system is presented.
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