Design and simulation of hybrid CMOS–SET circuits
Single electron devices have extremely poor driving capabilities so that direct application to
practical circuits is as yet almost impossible. A new methodology to overcome this problem
is to build hybrid circuits consisting of single electron transistors (SETs) and CMOS
interfaces. In this work a room temperature operable hybrid CMOS–SET inverter circuit,
hybrid CMOS–SET NOR gate and their Voltage Transfer Characteristics (VTCs) are
proposed. The MIB compact model for SET device and BSIM4. 6.1 model for CMOS are …
practical circuits is as yet almost impossible. A new methodology to overcome this problem
is to build hybrid circuits consisting of single electron transistors (SETs) and CMOS
interfaces. In this work a room temperature operable hybrid CMOS–SET inverter circuit,
hybrid CMOS–SET NOR gate and their Voltage Transfer Characteristics (VTCs) are
proposed. The MIB compact model for SET device and BSIM4. 6.1 model for CMOS are …
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