Design of an 845-nm GaAs vertical-cavity silicon-integrated laser with an intracavity grating for coupling to a SiN waveguide circuit

S Kumari, J Gustavsson, EP Haglund… - IEEE Photonics …, 2017 - ieeexplore.ieee.org
S Kumari, J Gustavsson, EP Haglund, J Bengtsson, A Larsson, G Roelkens, R Baets
IEEE Photonics Journal, 2017ieeexplore.ieee.org
A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane
waveguide coupling has been designed and optimized using numerical simulations. A
shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-
cavity silicon-integrated laser to both set the polarization state of the resonant optical field
and to enable output coupling to a SiN waveguide with high efficiency. The numerical
simulations predict that for apertures of 4 and 6-μm oxide-confined VCSILs operating at 845 …
A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-cavity silicon-integrated laser to both set the polarization state of the resonant optical field and to enable output coupling to a SiN waveguide with high efficiency. The numerical simulations predict that for apertures of 4 and 6-μm oxide-confined VCSILs operating at 845-nm wavelength, a slope efficiency for the light coupled to the waveguide of 0.18 and 0.22 mW/mA is achievable, respectively, while maintaining a low threshold gain of 583 and 589 cm -1 , respectively, for the lasing.
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