An accurate thermal expansion coefficient (α) of a thin film is important in the design of
microelectronic devices and microsystems. In this research, we present the use of
microbridge buckling deformation caused by residual stresses to determine the α of a
thermal oxide (SiO2) film. The determination of α is supported through experimental means
and the analysis by finite-element method (FEM) of the buckling profiles of a microbridge.
Moreover, to obtain the α of a thermal SiO2 film accurately, a nanoindentation system and an …