Development of (λ∼ 9.4 µm) GaAs-based quantum cascade lasers
K Kosiel, A Szerling, P Karbownik… - … Terahertz and Mid …, 2009 - ieeexplore.ieee.org
The development of (λ∼ 9.4 µm) GaAs-based quantum cascade lasers (QCLs) operating
over 260K is reported. The laser design followed an “anticrossed-diagonal” scheme of Page
et al.[1]. The QCL GaAs/Al 0.45 Ga 0.55 As heterostructures were grown by solid source
(SS) MBE. The double trench lasers were fabricated using wet etching and Si 3 N 4 for
electrical insulation. Double plasmon confinement with Al-free waveguide has been used to
minimize absorption losses. Optical and electrical properties of resulting devices are …
over 260K is reported. The laser design followed an “anticrossed-diagonal” scheme of Page
et al.[1]. The QCL GaAs/Al 0.45 Ga 0.55 As heterostructures were grown by solid source
(SS) MBE. The double trench lasers were fabricated using wet etching and Si 3 N 4 for
electrical insulation. Double plasmon confinement with Al-free waveguide has been used to
minimize absorption losses. Optical and electrical properties of resulting devices are …
Development of (λ∼ 9.4 μm) GaAs-Based Quantum Cascade Lasers Operating at the Room Temperature
K Kosiel, A Szerling, M Bugajski, P Karbownik… - Terahertz and Mid …, 2011 - Springer
The development of (λ∼ 9. 4 μ m) GaAs-based quantum cascade lasers (QCLs) operating at
the room temperature is reported. The laser design followed an “anticrossed-diagonal”
scheme of Page et al.[1]. The QCL GaAs∕ Al 0.45 Ga 0.55 As heterostructures were grown
by solid source (SS) MBE. The double trench lasers were fabricated using wet etching and
Si 3 N 4 for electrical insulation. Double plasmon confinement with Al-free waveguide has
been used to minimize absorption losses. Optical and electrical properties of resulting …
the room temperature is reported. The laser design followed an “anticrossed-diagonal”
scheme of Page et al.[1]. The QCL GaAs∕ Al 0.45 Ga 0.55 As heterostructures were grown
by solid source (SS) MBE. The double trench lasers were fabricated using wet etching and
Si 3 N 4 for electrical insulation. Double plasmon confinement with Al-free waveguide has
been used to minimize absorption losses. Optical and electrical properties of resulting …
以上显示的是最相近的搜索结果。 查看全部搜索结果