[PDF][PDF] Development of III-V on Si multijunction photovoltaics by wafer bonding
Proc. 33rd Eur. Photovoltaic Sol. Energy Conf.(EUPVSEC-33), 2017•researchgate.net
We report the fabrication of GaInP/AlGaAs/Si triple junction (3J) and AlGaAs/Si tandem (2J)
solar cells using surface-activated wafer bonding (SAB). We observe maximum power
conversion efficiency of 25.2% at 1-sun for a 3J device and 21.8% for a 2J device. The EQE
analysis of the cells was carried out, which suggested that the 3J device performance was
limited by the JSC generated at the Si subcell. We demonstrate that higher efficiencies are
feasible through design and adjustment of anti-reflective coating (ARC), GaAs bonding layer …
solar cells using surface-activated wafer bonding (SAB). We observe maximum power
conversion efficiency of 25.2% at 1-sun for a 3J device and 21.8% for a 2J device. The EQE
analysis of the cells was carried out, which suggested that the 3J device performance was
limited by the JSC generated at the Si subcell. We demonstrate that higher efficiencies are
feasible through design and adjustment of anti-reflective coating (ARC), GaAs bonding layer …
Abstract
We report the fabrication of GaInP/AlGaAs/Si triple junction (3J) and AlGaAs/Si tandem (2J) solar cells using surface-activated wafer bonding (SAB). We observe maximum power conversion efficiency of 25.2% at 1-sun for a 3J device and 21.8% for a 2J device. The EQE analysis of the cells was carried out, which suggested that the 3J device performance was limited by the JSC generated at the Si subcell. We demonstrate that higher efficiencies are feasible through design and adjustment of anti-reflective coating (ARC), GaAs bonding layer thickness and Si subcell.
researchgate.net
以上显示的是最相近的搜索结果。 查看全部搜索结果