Magnesium doped ZnO polycrystalline thin film was deposited on p-type Si by sol–gel
method, and the same was annealed at in oxygen rich environment. The magnesium doping
in lattice structure of zinc oxide was examined by X-ray diffraction measurements. The
dielectric phase transition observed at indicated the existence of ferroelectric properties in
the deposited film. The ferroelectricity in the deposited film was confirmed by the polarization
and electric field hysteresis curve. Maximum values of the spontaneous polarization and …

These instructions are an example of what a properly prepared meeting abstract should look
like. Proper column and margin measurements are indicated. Zinc oxide is a promising
semiconductor material and its ternary ZnMgO offers excellent material system with a variety
of applications. The ferroelectric behavior of magnesium doped zinc oxide thin film was
discussed in this paper. The ferroelectric layer instead of dielectric layer is used in
Ferroelectric Random Access Memories (FeRAM) to achieve non volatility. FeRAM has …