This work describes a small-signal microwave method for determining the differential carrier
lifetime and transport effects in electrically injected InGaN/GaN light-emitting diodes (LEDs).
By considering the carrier diffusion, capture, thermionic escape, and recombination, the rate
equations are used to derive an equivalent small-signal electrical circuit for the LEDs, from
which expressions for the input impedance and modulation response are obtained. The
expressions are simultaneously fit to the experimental data for the input impedance and …