Dilute nitride resonant cavity enhanced photodetector with internal gain for the λ∼ 1.3 μm optical communications window
We report on a novel dilute nitride-based resonant cavity enhanced photodetector (RCEPD)
operating at 1.286 μm. The RCEPD was fabricated using 21 pairs top and 24 pairs bottom
GaAs/AlGaAs distributed Bragg reflectors for mirrors and 7 nm thick nine GaAs/Ga 0.65 In
0.35 N 0.02 As 0.98 quantum wells as the absorption region. For a 15 μm diameter window,
the photocurrent at 1.286 μm is 27 μA and 42 μA, at V= 0 and− 1 V, respectively, whereas
the dark current is as low as 1.7 nA at− 1 V. At the operating wavelength, an excellent …
operating at 1.286 μm. The RCEPD was fabricated using 21 pairs top and 24 pairs bottom
GaAs/AlGaAs distributed Bragg reflectors for mirrors and 7 nm thick nine GaAs/Ga 0.65 In
0.35 N 0.02 As 0.98 quantum wells as the absorption region. For a 15 μm diameter window,
the photocurrent at 1.286 μm is 27 μA and 42 μA, at V= 0 and− 1 V, respectively, whereas
the dark current is as low as 1.7 nA at− 1 V. At the operating wavelength, an excellent …
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