Direct evidence of a Cu(In,Ga)3Se5 phase in a bulk, high-efficiency Cu(In,Ga)Se2 device using atom probe tomography
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014•ieeexplore.ieee.org
This paper will descuss the findings of an ordered vacancy compound (OVC) phase, Cu (In,
Ga) 3 Se 5 (135 phase), that exists deep into the bulk of a high-efficiency CIGSe absorber as
determined by atom probe tomography (APT). To date, literature has shown that absorbers
grown with the three-step process exhibit the 135 phase only within the first few nanometers
from the CdS/CIGSe interface. In this contribution, we have found a small volume (100 nm×
100 nm× 300 nm) of the 135 phase to exist about 400 nm into the absorber. The paper will …
Ga) 3 Se 5 (135 phase), that exists deep into the bulk of a high-efficiency CIGSe absorber as
determined by atom probe tomography (APT). To date, literature has shown that absorbers
grown with the three-step process exhibit the 135 phase only within the first few nanometers
from the CdS/CIGSe interface. In this contribution, we have found a small volume (100 nm×
100 nm× 300 nm) of the 135 phase to exist about 400 nm into the absorber. The paper will …
This paper will descuss the findings of an ordered vacancy compound (OVC) phase, Cu(In,Ga) 3 Se 5 (135 phase), that exists deep into the bulk of a high-efficiency CIGSe absorber as determined by atom probe tomography (APT). To date, literature has shown that absorbers grown with the three-step process exhibit the 135 phase only within the first few nanometers from the CdS/CIGSe interface. In this contribution, we have found a small volume (100 nm × 100 nm × 300 nm) of the 135 phase to exist about 400 nm into the absorber. The paper will discuss possibly why the phase was found by APT and not by other characterization techniques.
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