We directly image an InP p–n junction depletion region under both forward and reverse bias
using scanning voltage microscopy (SVM), a scanning probe microscopy (SPM) technique.
The SVM results are compared to those obtained with scanning spreading resistance
microscopy (SSRM) measurements under zero bias on the same sample. The SVM and
SSRM data are shown to agree with the results of semiclassical calculations. The physical
basis of the SVM measurement process is also discussed, and we show that the measured …