… /drain by low temperature selective … extension implant dose on device drive current,
parasitic resistance, and junction leakage current have been studied with silicided and non-silicided …

… self-aligned silicide (salicide) technology has been attracting … and unreacted Ti and TiN were
selectively etched in a H2SO-… Next, the capability of the extended S/D polysilicon as a local …

… useful discussions, I could not have finished this work in its … on the silicide resistivity and
source/drain diffusion depth...............… source/drain can be formed by either deposition or selective …

… the PMOS and NMOS transistors, which typically have a 40 nm … an" LDD" extension due to
the symmetry of the MOSFET. … dose is selectively implanted into the NMOS transistor areas to …

… , and titanium silicide gates are the useful approach for highly … After source/drain junctions
have been formed and no further … Local compressive stress is created by selectively growing a …

… As a consequence, the drain silicide can be extended to the … the metal layer is deposited and
silicided selectively at the Si/metal … of an XMOS transistor having an additional bottom gate,” …

… salicide process relies on selective growth of silicide on silicon (… We have mentioned that Ti
silicide reaction in a nitrogen … The drain extension, another term for HDD, has been used for …

… and without the silicidation process has demonstrated that the self-aligned … and is selectively
reacted with the underlying … The, reachthrough implant forms a lightly doped drain extension …

… The silicide has a lower resistance than the underlying doped silicon or poly. As a result, …
Following the selective etching, only the salicided contacts remain, eg, source and drain …

… doped regions for source and drain are replaced with silicide … have been fabricated using
the conventional MOSFET … source and drain, the choice of gate material is extended to …