Driven by complementary operation of SiC-MOSFET and SiC-JFET within isolated flyback converter circuit
N Satoh, T Hayashi, T Ohsato, H Arai… - Nonlinear Theory and Its …, 2018 - jstage.jst.go.jp
N Satoh, T Hayashi, T Ohsato, H Arai, Y Nishida
Nonlinear Theory and Its Applications, IEICE, 2018•jstage.jst.go.jpFlyback converters are used in DC–DC conversion with electric isolation between the input
and the output. In flyback converter circuits, a silicon carbide (SiC) metal-
oxidesemiconductor field-effect transistor (MOSFET) and a silicon carbide junction gate field-
effect transistor (JFET) are adopted as the switching and rectifying devices, respectively. SiC
devices were controlled due to one signal, and a switching frequency of 1 MHz was
achieved. The voltage and current on the input and output sides in the flyback converter …
and the output. In flyback converter circuits, a silicon carbide (SiC) metal-
oxidesemiconductor field-effect transistor (MOSFET) and a silicon carbide junction gate field-
effect transistor (JFET) are adopted as the switching and rectifying devices, respectively. SiC
devices were controlled due to one signal, and a switching frequency of 1 MHz was
achieved. The voltage and current on the input and output sides in the flyback converter …
Abstract
Flyback converters are used in DC–DC conversion with electric isolation between the input and the output. In flyback converter circuits, a silicon carbide (SiC) metal-oxidesemiconductor field-effect transistor (MOSFET) and a silicon carbide junction gate field-effect transistor (JFET) are adopted as the switching and rectifying devices, respectively. SiC devices were controlled due to one signal, and a switching frequency of 1 MHz was achieved. The voltage and current on the input and output sides in the flyback converter were observed as part of the circuit operation analysis. The power conversion efficiency was evaluated through waveform observation.
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