An efficient high-frequency drive circuit for GaN power HFETs

B Wang, N Tipirneni, M Riva, A Monti… - IEEE Transactions …, 2009 - ieeexplore.ieee.org
heterostructure field-effect transistors (HFETs) and the design of a resonant drive circuit for
GaN power HFET … The purpose of this paper is to design a driver for III-nitride HFETs, which …

Application-based review of GaN HFETs

EA Jones, F Wang, B Ozpineci - 2014 IEEE Workshop on Wide …, 2014 - ieeexplore.ieee.org
… devices called heterojunction field-effect transistors (HFETs), … driver, and its output clamps
the depletion-mode GaN HFET’s … performance in a high frequency gallium nitride based point …

A high frequency, high efficiency GaN HFET based inductive power transfer system

A Cai, A Pereira, R Tanzania, YK Tan… - 2015 IEEE Applied …, 2015 - ieeexplore.ieee.org
… an inverter using Gallium Nitride (GaN) power transistors which … Gallium Nitride (GaN)
Heterojunction Field Effect Transistors (… The half bridge section of the GaN HFET driver circuit used …

Gallium nitride-based complementary logic integrated circuits

Z Zheng, L Zhang, W Song, S Feng, H Xu, J Sun… - Nature …, 2021 - nature.com
… is the current driving force of the integrated circuit industry. Silicon’s … heterojunction field-effect
transistors (HFETs). Therefore, in this paper, the circuits are referred to as ‘CL circuits’ with ‘…

Application of GaN-based heterojunction FETs for advanced wireless communication

Y Ohno, M Kuzuhara - IEEE Transactions on Electron Devices, 2001 - ieeexplore.ieee.org
… , silicon bipolar transistors, GaAs MESFETs and HFETs, and SiC … In the case of CMOS circuits,
both the driver and load resistors … AlGaN/GaN heterostructure field effect transistors on SiC …

Lateral and vertical power transistors in GaN and Ga2O3

O Hilt, E Bahat Treidel, M Wolf, C Kuring… - IET Power …, 2019 - Wiley Online Library
… offered a bipolar junction transistor and Semisouth a junction field effect transistor, both with
… the first lateral aluminium gallium nitride (AlGaN)/GaN heterojunction FETs (GaN HFETs) for …

Gallium nitride power devices: a state of the art review

A Udabe, I Baraia-Etxaburu, DG Diez - IEEE Access, 2023 - ieeexplore.ieee.org
… In this operation condition, the transistor works as a field effect transistor and … GaN transistor
is generally less than -10 V. Thus, a proper power supply is required in the gate driver circuit

[PDF][PDF] Investigation of Gallium Nitride Bidirectional Power Semiconductor Devices with Polarization Super Junction Technology

X Tan - 2023 - etheses.whiterose.ac.uk
HFETs can realize the function of bidirectional switches. Detailed analysis of the on-state
behaviour of the fabricated Bi PSJ HFETs … an undoped AlGaN/GaN heterostructure with 2DEG. ..…

New developments in gallium nitride and the impact on power electronics

MA Khan, G Simin, SG Pytel, A Monti… - 2005 IEEE 36th …, 2005 - ieeexplore.ieee.org
… Nearly at the same time, field-effect transistors have been recognized … As a result, group
III-Nitride HFETs have nearly ten times … Semiconductor Heterostructure Field Effect Transistors (…

[图书][B] Gallium nitride (GaN): physics, devices, and technology

F Medjdoub - 2017 - books.google.com
… Reduction of Electrical Field in Critical Device Regions In GaN heterojunction field-effect
transistors (HFETs), the highest electric fields appear in the vicinity of the gate, especially at the …