Effect of long-range potential fluctuations on scaling in the integer quantum Hall effect
HP Wei, SY Lin, DC Tsui, AMM Pruisken - Physical review B, 1992 - APS
HP Wei, SY Lin, DC Tsui, AMM Pruisken
Physical review B, 1992•APSWe report a set of transport data taken in two low-mobility GaAs/Al x Ga 1− x As
heterostructures. When T> 200 mK, we find that the T dependence of (d ρ xy/dB) max
behaves differently in different Landau levels, whereas when T< 200 mK, it behaves like T−
0.42 as reported by Wei et al.[Phys. Rev. Lett. 61, 1294 (1988)]. The characteristic T (= 200
mK) for observing the critical behavior is much lower than that of previous observations in
the In x Ga 1− x As/InP heterostructure. This lowering of T for scaling is attributed to the …
heterostructures. When T> 200 mK, we find that the T dependence of (d ρ xy/dB) max
behaves differently in different Landau levels, whereas when T< 200 mK, it behaves like T−
0.42 as reported by Wei et al.[Phys. Rev. Lett. 61, 1294 (1988)]. The characteristic T (= 200
mK) for observing the critical behavior is much lower than that of previous observations in
the In x Ga 1− x As/InP heterostructure. This lowering of T for scaling is attributed to the …
Abstract
We report a set of transport data taken in two low-mobility GaAs/Al x Ga 1− x As heterostructures. When T> 200 mK, we find that the T dependence of (d ρ x y/dB) max behaves differently in different Landau levels, whereas when T< 200 mK, it behaves like T− 0.42 as reported by Wei et al.[Phys. Rev. Lett. 61, 1294 (1988)]. The characteristic T (= 200 mK) for observing the critical behavior is much lower than that of previous observations in the In x Ga 1− x As/InP heterostructure. This lowering of T for scaling is attributed to the dominance of long-range potential fluctuations due to the remote ionized impurities in the Al x Ga 1− x As.
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