Effects of annealing temperature and ITO intermediate thin-layer on electrical proprieties of Au/p-Si structure deposited by RF magnetron sputtering
In this paper, a new Au/p-Si Schottky Barrier Diode (SBD) based on Indium Tin Oxide (ITO)
intermediate thin-film is proposed and experimentally investigated by including the
annealing temperature effect. We elaborated the Au/ITO/p-Si structure by means of RF
magnetron sputtering technique and compared its electrical properties with the conventional
Au/p-Si SBD. The role of the annealing process at 200 and 400° C as well as the ITO
interface thin-layer in improving the SBD basic electrical parameters is analyzed. The …
intermediate thin-film is proposed and experimentally investigated by including the
annealing temperature effect. We elaborated the Au/ITO/p-Si structure by means of RF
magnetron sputtering technique and compared its electrical properties with the conventional
Au/p-Si SBD. The role of the annealing process at 200 and 400° C as well as the ITO
interface thin-layer in improving the SBD basic electrical parameters is analyzed. The …
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