Effects of various plasma pretreatments on 193nm photoresist and linewidth roughness after etching
MC Kim, D Shamiryan, Y Jung, W Boullart… - Journal of Vacuum …, 2006 - pubs.aip.org
Among the pretreatment methods which are performed just after the lithographic process to
minimize the roughness increase of 193 nm photoresist during the subsequent etching
processes, an in situ plasma pretreatment is the most cost effective. A HBr plasma
pretreatment has proven quite effective and a few papers have described the mechanism. In
an effort to understand further, the authors evaluated four plasma pretreatments using HBr,
Ar, H 2, or Cl 2 gases and compared their results. Fourier transform infrared (FTIR) …
minimize the roughness increase of 193 nm photoresist during the subsequent etching
processes, an in situ plasma pretreatment is the most cost effective. A HBr plasma
pretreatment has proven quite effective and a few papers have described the mechanism. In
an effort to understand further, the authors evaluated four plasma pretreatments using HBr,
Ar, H 2, or Cl 2 gases and compared their results. Fourier transform infrared (FTIR) …