Electric field dependent photoluminescence decay kinetics and its radiative component are
studied in polar InGaN/GaN quantum heterostructures at low fields. Under externally applied
electric field lower than polarization fields, spectrally and time resolved photoluminescence
measurements are taken to retrieve internal quantum efficiencies and carrier lifetimes as a
function of the applied field. Subsequently, relative behavior of radiative recombination
lifetimes is obtained in response to the applied field. In these characterizations of polar …