This work describes the analysis and fabrication by Low Pressure Chemical Vapor
Deposition of two light-emitting capacitors (LECs) constituted by nanometric multilayers of
silicon-rich oxide. For both structures, seven layers were used: three light emitting layers
with 6% silicon excess and four conductive layers with 12% silicon excess for one LEC and
the other with 14% silicon excess. Both LECs were annealed at 1100 C. Both multilayers
demonstrate a substantially improved photoluminescent response compared to single …