Metal/CaF 2/p-Si (111) capacitors with the improved-quality several-nanometer-thick
epitaxial fluorite films are examined, aiming at solidifying a candidacy of this material for
barrier layers in silicon devices. Structural and transport properties of a thin crystalline
dielectric are characterized by different experimental techniques. The measured current-
voltage characteristics accompanied with simulation results demonstrate that the elastic
tunneling electron injection takes place in the considered structures. The same result follows …