Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition
N Huby, S Ferrari, E Guziewicz, M Godlewski… - Applied Physics …, 2008 - pubs.aip.org
We report on the electrical properties of thin film transistors based on zinc oxide (ZnO) layers
grown by low temperature (100–170 C) atomic layer deposition. As evidenced through Hall
effect measurements, a drastic decrease of the carrier concentration occurred for ZnO films
grown at 100 C. Time of flight–secondary ions mass spectroscopy analysis revealed that
this decrease is associated with an increase of the hydroxide groups in the ZnO layer which
suppressed oxygen vacancy formation. Transistors fabricated from ZnO films grown at 100 C …
grown by low temperature (100–170 C) atomic layer deposition. As evidenced through Hall
effect measurements, a drastic decrease of the carrier concentration occurred for ZnO films
grown at 100 C. Time of flight–secondary ions mass spectroscopy analysis revealed that
this decrease is associated with an increase of the hydroxide groups in the ZnO layer which
suppressed oxygen vacancy formation. Transistors fabricated from ZnO films grown at 100 C …
以上显示的是最相近的搜索结果。 查看全部搜索结果