Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier
Y Ando, K Hamaya, K Kasahara, Y Kishi… - Applied Physics …, 2009 - pubs.aip.org
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si)
using epitaxially grown Fe 3 Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ-
doped n+-Si layer (∼ 10 19 cm− 3) near the interface between a ferromagnetic Fe 3 Si
contact and a Si channel (∼ 10 15 cm− 3), we achieve a marked enhancement in the
tunnel conductance for reverse-bias characteristics of the Fe 3 Si/Si Schottky diodes. Using
laterally fabricated four-probe geometries with the modified Fe 3 Si/Si contacts, we detect …
using epitaxially grown Fe 3 Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ-
doped n+-Si layer (∼ 10 19 cm− 3) near the interface between a ferromagnetic Fe 3 Si
contact and a Si channel (∼ 10 15 cm− 3), we achieve a marked enhancement in the
tunnel conductance for reverse-bias characteristics of the Fe 3 Si/Si Schottky diodes. Using
laterally fabricated four-probe geometries with the modified Fe 3 Si/Si contacts, we detect …
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